The novel device has potential to drastically improve standards of computing hardware and electronics.
Researchers from Indian Institute of Technology (IIT) Bombay developed a high-performance magnetic tunnel junction, using wave like properties to produce a quantum transport computational platform. This platform could predict the standard operation and performance of devices that works on wave-like properties. The results of the research were published in the journal Applied Physics Letters in the December 2018 issue.
The new device demonstrated low resistance to current flow when the magnetization of the two layers are aligned parallel and shows high resistance when the two are not parallel (pointing in opposite directions).
Abhishek Sharma, PhD student at IIT Bombay and the first author of the paper, said: “Electrons being quantum mechanical, can exhibit interference effects just as light can. Making use of this “wavelike nature” of electrons, the researchers propose a device, which they name the band pass Fabry-Perot magnetic tunnel junction. They combine two phenomena seen in optics – anti-reflection and Fabry-Perot resonance – to design a spintronic device. We achieve a very high spin filtering which results in high TMR (tens of thousands percent) and a large spin transfer torque in comparison with the typical MTU device.”
The researchers said that magnetic RAM (MRAM) device uses spin transfer torque, which is an emerging technology based on the developed method. Bhaskaran Muralidharan, from the Electrical Engineering department of IIT Bombay, says, “it promises to deliver non-volatility [memory retention after it is switched off], high speed and low power dissipation, apart from offering the possibility of going beyond von Neumann computation architecture.”